The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Dec. 27, 2002
Byoung Kwon Ahn, Seoul, KR;
Joon Ho Kim, Seoul, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A capacitor in a semiconductor device and fabricating method therefor are disclosed, in which the capacitor in a semiconductor device comprises: a semiconductor substrate, a first Ru film formed on the semiconductor substrate, a Y O film formed on the first Ru film, a TiON film formed on the Y O film, and a second Ru film formed on the TiON film; and the method for fabricating a capacitor in a semiconductor device comprising the steps of: providing a semiconductor substrate, forming a first Ru film on the semiconductor substrate, forming a Y O film on the first Ru film, forming a TiON film on the Y O film, and forming a second Ru film on the TiON film.