The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2003

Filed:

Jan. 31, 2002
Applicant:
Inventors:

Takatoshi Tsujimura, Fujisawa, JP;

Taroh Hasumi, Machida, JP;

Osamu Tokuhiro, Shiga-ken, JP;

Mitsuo Morooka, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9786 ;
U.S. Cl.
CPC ...
H01L 2/9786 ;
Abstract

A thin film transistor and method of making the same is disclosed in which a contact hole is formed with a flattened interface between openings in an inorganic material passivation layer and an organic material interlayer insulating film thereabove. The method includes etching an opening in the interlayer insulating film, using that opening as a mask for subsequently etching a self-aligned opening in the passivation layer, and again etching the interlayer insulating film in a develop back process to obtain a contact hole having a flattened inner sidewall.


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