The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Nov. 08, 2002
Applicant:
Inventor:
Takashi Miida, Kanagawa, JP;
Assignee:
Innotech Corproation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A sole state imaging device includes a photodetection diode and an insulated gate field effect transistor provided adjacent to the photodetection diode for optical signal detection. In a method of making the device, a carrier pocket is formed in a second well region, and an element isolation insulating film is formed to isolate adjacent unit pixels from each other. In addition, an element isolation region of an opposite conductivity type is formed to isolate a second semiconductor layer of one conductivity type in such a way as to include the lower surface of the element isolation insulating film and reach a first semiconductor layer.