The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2003

Filed:

Jan. 30, 2002
Applicant:
Inventors:

Gerard C. D'Couto, San Jose, CA (US);

George Tkach, Santa Clara, CA (US);

Michal Danek, Cupertino, CA (US);

Assignee:

Novellus Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/434 ; C23C 1/436 ;
U.S. Cl.
CPC ...
C23C 1/434 ; C23C 1/436 ;
Abstract

A method of depositing thin films comprising Ti and TiN within vias and trenches having high aspect ratio openings of 6:1 is disclosed. The Ti and TiN layers are formed on an integrated circuit substrate using a Ti target in a non-nitrided mode in a hollow cathode magnetron apparatus in combination with an RF biased electrostatic chuck to modulate the properties of the deposited Ti and TiN layers in the same chamber, without the use of a collimator or a shutter. The resulting Ti and TiN layers are superior in step coverage, grain size, grain orientation, roughness and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.


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