The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2003

Filed:

Dec. 19, 2001
Applicant:
Inventors:

Fumihiko Aiga, Kanagawa-ken, JP;

Hiroyuki Fuke, Kanagawa-ken, JP;

Yoshiaki Terashima, Kanagawa-ken, JP;

Mutsuki Yamazaki, Kanagawa-ken, JP;

Hiroyuki Kayano, Kanagawa-ken, JP;

Tatsunori Hashimoto, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01P 1/203 ;
U.S. Cl.
CPC ...
H01P 1/203 ;
Abstract

A high frequency filter having steep skirt characteristics using a sapphire R-plane substrate. The filter comprises a substrate having first and second faces. The first face is a sapphire R-plane. A grounded conductive layer is formed on the second face of the substrate. A pair of input/output terminals is formed on the first face. In embodiments, hairpin-shaped resonating portions are formed between the pair of input/output terminals. Each of the resonating portions has at least one long side. Each long side of the resonating portions makes an angle of &psgr; with <11-20> direction of a sapphire substrate. The angle &psgr; satisfies relations 0&deg;&lE;&psgr;&lE;30&deg;. In embodiments, the resonating portions are asymetric, J-shaped, or rectangular with an opening.


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