The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2003
Filed:
Jan. 13, 2003
Ikuo Nishimoto, Tokyo, JP;
Tatsuya Ueno, Tokyo, JP;
Yamatake Corporation, Tokyo, JP;
Abstract
An insulated-gate semiconductor device comprises a source region (S) formed on a predetermined semiconductor substrate such as a ball semiconductor, a drain region (D) formed on the semiconductor substrate at a distance from the source region; and a gate electrode (G) formed on the semiconductor substrate with an insulating layer interposed therebetween to create a channel region between the source and drain regions. The insulated-gate semiconductor device is characterized in that the drain region and the source region are formed asymmetrically with respect to the channel region suited to be incorporated in a rectifier circuit for full-wave rectification of power supplied through inductive coupling of coils. In particular, the channel region is formed to surround the source region while the drain region is formed outside the channel region so that the effective channel width adjoining the source region may be different from that adjoining the drain region.