The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2003
Filed:
Nov. 05, 2001
Applicant:
Inventor:
Bantval Jayant Baliga, Raleigh, NC (US);
Assignee:
Silicon Semiconductor Corporation, Research Triangle Park, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/994 ; H01L 2/996 ;
U.S. Cl.
CPC ...
H01L 2/994 ; H01L 2/996 ;
Abstract
Vertical power devices include a semiconductor substrate having a drift region of first conductivity type therein and first and second stripe-shaped trenches that extend in the semiconductor substrate and define a drift region mesa therebetween. First and second insulated source electrodes are provided in the first and second stripe-shaped trenches, respectively. A UMOSFET, comprising a third trench that is shallower than the first and second stripe-shaped trenches, is provided in the drift region mesa.