The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2003
Filed:
Mar. 07, 2002
Kazuhiko Takada, Kawasaki, JP;
Shinji Sugatani, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
There are provided the steps of forming a tunnel insulating film on a semiconductor substrate, forming a first semiconductor film constituting a lower portion of a floating gate on the tunnel insulating film, forming device isolation recesses by etching device isolation regions on the first semiconductor film, the tunnel insulating film, and the semiconductor substrate, forming an device isolation insulating film in the device isolation recesses and on the first semiconductor film, removing the device isolation insulating film from an upper surface of the first semiconductor film and thinning the device isolation insulating film on the device isolation recesses, growing selectively a second semiconductor film serving as an upper portion of the floating gate on the first semiconductor film and growing the second semiconductor film on the device isolation insulating film to extend in the lateral direction, forming a dielectric film on the floating gate, and forming a conductive film serving as a control gate on the dielectric film.