The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2003
Filed:
Jul. 09, 2001
David Neil Casey, Lancashire, GB;
Zetex PLC, Chadderton Oldham, GB;
Abstract
A method for reducing damage to a semiconductor structure resulting from migration of constituents of a first component part ( ) of the structure into a subsequently deposited second component part ( ) of the structure which makes contact with a surface of the first component part ( ). A third component part ( ) of the structure is deposited before the second component part ( ), the third component part ( ) being positioned so as to be contacted by the second component part ( ) adjacent the said surface of the first component part ( ). The third component part ( ) has a composition such that it acts as a donor of constituents ( ) to the second component part. The donor constituents ( ) migrate into the second component part ( ) when the second component part ( ) is deposited and reduce the migration of constituents ( ) of the first component part ( ) into the second component part ( ). If the first component part ( ) is silicon, the third component part ( ) may be polysilicon. The invention enables the use of a pure material, for example pure aluminium, without exposing the first component part ( ) to damage as a result of migration of constituents of the first component part ( ) into the aluminium.