The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2003
Filed:
Nov. 07, 2001
Applicant:
Inventors:
Keiichiro Asai, Nagoya, JP;
Tomohiko Shibata, Nagoya, JP;
Yukinori Nakamura, Nagoya, JP;
Mitsuhiro Tanaka, Nagoya, JP;
Assignee:
NGK Insulators, Ltd., Nagoya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/130 ; H01L 2/136 ;
U.S. Cl.
CPC ...
H01L 2/130 ; H01L 2/136 ;
Abstract
A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride comprising at least one Group III element and includes at least 50 atomic percent of elemental Al with respect to all of the Group III elements of the Group III nitride of the underfilm. The surface of the underfilm is contoured (concave-convex) and includes flat regions, and less than 50% of the underfilm surface is occupied by the flat regions.