The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2003
Filed:
Mar. 09, 2001
Chetan Singh Solanki, Leuven, BE;
Renat Bilyalov, Tielt Winge, BE;
Jef Poortmans, Leuven, BE;
Guy Beaucarne, Kingsford, AU;
Interuniversitair Microelektronica Centrum (IMEC), Leuven, BE;
Abstract
A method for the manufacture, formation, and removal of porous layers in a semiconductor substrate having at least a surface acting as a cathode. The method comprises applying a solution comprising negative Fluorine (F ) ions between the surface of the semiconductor substrate and an anode. The method further comprises applying a predetermined current between the anode and the cathode. The method further comprises maintaining the predetermined current at substantially the same current value for a sufficient amount of time to obtain a low porosity layer at said surface. A high porosity layer positioned under the low porosity layer is also obtained by the method of the invention.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile