The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2003
Filed:
Jul. 18, 2002
Ki-Young Lee, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
Methods for manufacturing semiconductor devices are provided. First and second portions of a first metal layer are formed in a first interlayer insulating layer. A second interlayer insulating layer is formed to cover the first portion and has an opening that exposes the second portion. A dielectric layer is formed on the exposed second portion. A second metal layer is formed on the dielectric layer to fill the opening in a capacitor region. A via contact hole to expose the first portion is formed in the second insulating layer. A third metal layer is formed in the via contact hole. A third interlayer insulating layer is formed on the second interlayer insulating layer. Contact holes to expose the second metal layer and the third metal layer are formed in the third interlayer insulating layer. A fourth metal layer is formed in the contact holes.