The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2003
Filed:
Sep. 13, 2001
Koji Iwamoto, Kanagawa, JP;
Hiroki Nagasaki, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
There is provided a long-life and highly reliable air ridge type semiconductor laser device having a multi-layer structure including a first cladding layer of n-Al GaInP, an active layer of AlGaAs, a second cladding layer of p-Al GaInP and a contact (capping) layer of p-GaAs epitaxially grown in this sequential order on a substrate of n-GaAs, in which the contact layer and an upper portion of the second cladding layer is etched to be a ridge stripe, and the second cladding layer comprises an upper layer, which constitutes the ridge stripe together with the contact layer, and a lower layer having a thickness of 0.3 &mgr;m, which is positioned below the upper layer and extend outwardly from the both lower ends of the upper layer, and further, the semiconductor laser device includes a protection layer being an epitaxially grown n-GaAs layer having a film thickness of 0.15 &mgr;m provided on an upper surface of the lower layer of the second cladding layer and side planes of the ridge stripe other than an upper surface thereof.