The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2003
Filed:
May. 26, 2000
Ashish K. Verma, San Jose, CA (US);
Arnold C. Chen, Fremont, CA (US);
Daniel A. Francis, Oakland, CA (US);
Finisar Corporation, Sunnyvale, CA (US);
Abstract
A monolithic semiconductor device extends primarily along a vertical direction and includes the following layers. A first semiconductor layer and a second semiconductor layer form an active region between them. A third semiconductor layer is doped the same type as the second semiconductor layer but is lattice mismatched to the second semiconductor layer. The lattice mismatch results in unwanted electrical effects. An additional doping layer, preferably a delta doping layer, is located in close proximity to the interface between the second and third semiconductor layers. The delta doping layer mitigates the unwanted electrical effects introduced by the lattice mismatch. In a preferred embodiment, the device further includes a bottom mirror layer and a top mirror layer, which together form a laser cavity including the active region.