The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2003

Filed:

Nov. 30, 2001
Applicant:
Inventors:

Lei L. Mercado, Gilbert, AZ (US);

Vijay Sarihan, Paradise Valley, AZ (US);

Young Sir Chung, Chandler, AZ (US);

James Jen-Ho Wang, Phoenix, AZ (US);

Edward R. Prack, Austin, TX (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ;
U.S. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ;
Abstract

In accordance with one embodiment, a stress buffer ( ) is formed between a power metal structure ( ) and passivation layer ( ). The stress buffer ( ) reduces the effects of stress imparted upon the passivation layer ( ) by the power metal structure ( ). In accordance with an alternative embodiment, a power metal structure ( A) is partitioned into segments ( ), whereby electrical continuity is maintained between the segments ( ) by remaining portions of a seed layer ( ) and adhesion/barrier layer ( ). The individual segments ( ) impart a lower peak stress than a comparably sized continuous power metal structure ( ).


Find Patent Forward Citations

Mercado, Lei. (2003). Semiconductor power device and method of formation (U.S. Patent No. 6646347). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6646347

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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