The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2003
Filed:
Feb. 12, 2002
Minoru Higuchi, Tokyo, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device including an insulated gate field effect transistor (IGFET) has been disclosed. The IGFET may be formed in an element region defined by an element isolation region ( ) formed on a semiconductor substrate ( ). A covering portion ( ) may cover at least a portion of an end ( ) of the element region. Covering portion ( ) may be formed essentially of the same material as a side wall ( ) of a gate ( ) of the IGFET. A source/drain region ( ) may be formed using gate ( ) and covering portion ( ) as a mask. In this way, a distance between an intra-substrate high-concentration contour line ( ) and source/drain region ( ) in area of end ( ) of the element region may remain sufficient and an IGFET breakdown voltage may be improved.