The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2003
Filed:
May. 24, 2001
Applicant:
Inventors:
Youichi Yamamoto, Tokyo, JP;
Hiroshi Ikakura, Tokyo, JP;
Tomomi Suzuki, Tokyo, JP;
Yuichiro Kotake, Tokyo, JP;
Yoshimi Shioya, Tokyo, JP;
Kouichi Ohira, Tokyo, JP;
Shoji Ohgawara, Tokyo, JP;
Kazuo Maeda, Tokyo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
Abstract
The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N ) to a major deposition gas component consisting of siloxane and N O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film or on a substrate targeted for film formation.