The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2003
Filed:
Oct. 19, 2001
Applicant:
Inventor:
Rajashekhar Pullela, Westlake Village, CA (US);
Assignee:
GTRAN, Inc., Newbury Park, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18222 ;
U.S. Cl.
CPC ...
H01L 2/18222 ;
Abstract
One embodiment of the present invention provides a method of fabricating a semiconductor device including the steps of forming a first semiconductor layer; forming a second semiconductor layer over the first semiconductor layer; forming a mask over a first portion the second semiconductor layer; removing a second portion of the second semiconductor layer not covered by the mask; forming a first electrical connector on the first semiconductor layer; and forming a second electrical connector on the first portion of the second semiconductor layer.