The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2003
Filed:
Dec. 28, 2001
Applicant:
Inventors:
Peter Wawer, Dresden, DE;
Oliver Springmann, Dresden, DE;
Konrad Wolf, Otterfing, DE;
Olaf Heitzsch, Coswig, DE;
Kai Huckels, Wolfsburg, DE;
Reinhold Rennekamp, Dresden, DE;
Mayk Röhrich, Görlitz, DE;
Elard Stein Von Kamienski, Dresden, DE;
Christoph Kutter, Dresden, DE;
Christoph Ludwig, Langebrück, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method for producing a non-volatile semiconductor memory cell with a separate tunnel window cell includes the step of forming a tunnel zone in a late implantation step by performing a tunnel implantation with the aid of a tunnel window cell as a mask. The resulting memory cell has a small area requirement and a high number of program/clear cycles.