The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Jan. 19, 2001
Yasuhiro Kobayashi, Kadoma, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor laser device includes: active layer; first cladding layer, which is formed on the active layer and is made of (Al Ga ) In P (where 0≦X ≦1 and 0<Z <1) of a first conductivity type; current blocking layer, which is formed on the first cladding layer and is made of (Al Ga ) In P (where 0≦Y≦1 and 0<Z <1) of a second conductivity type and has striped region; and second cladding layer, which is formed at least in the striped region and is made of (Al Ga ) In P (where 0≦X ≦1 and 0<Z <1) of the first conductivity type. X , X and Y have relationships represented as Y>X and Y>X . Saturable absorption region absorbing laser light produced from the active layer is formed in part of the active layer under the current blocking layer.