The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Dec. 29, 2000
Applicant:
Inventors:
Shin-Ichi Ikeda, Tsukuba, Ibaraki 305-0031, JP;
Naoki Shirakawa, Tsukuba, JP;
Hiroshi Bando, Tsukuba, Ibaraki 305-0044, JP;
Eiichi Suzuki, Tsukuba, Ibaraki 305-0035, JP;
Assignee:
Other;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 2/1336 ;
Abstract
A field-effect transistor includes a silicon substrate on which is formed a channel region, a source region and a drain region. A gate insulation layer of a transition metal oxide having a perovskite structure is formed over at least the channel region, and a gate electrode is provided on the gate insulation layer.