The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Dec. 03, 1999
Mizuki Ono, Kanagawa-ken, JP;
Akira Toriumi, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A field-effect transistor has a vertical columnar structure to restrain a short channel effect without impairing the operating speed of an element. In a semiconductor device having a field-effect transistor with a vertical columnar structure, an n-type diffusion layer region is formed in a surface layer of a p-type silicon substrate. A columnar structure portion is formed in which an n-type silicon layer, a buried insulation film and an n-type silicon layer are stacked over the n-type diffusion layer region and the buried insulation film is set back inward from both silicon layers. A silicon layer is formed over the side surface of the columnar structure portion, and a gate electrode is formed over the surface of the silicon layer with a gate insulation film that is interposed therebetween.