The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Dec. 22, 2000
Applicant:
Inventors:
Yoshimi Shioya, Tokyo, JP;
Yuichiro Kotake, Tokyo, JP;
Youichi Yamamoto, Tokyo, JP;
Tomomi Suzuki, Tokyo, JP;
Hiroshi Ikakura, Tokyo, JP;
Shoji Ohgawara, Tokyo, JP;
Kouichi Ohira, Tokyo, JP;
Kazuo Maeda, Tokyo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
Abstract
There is provided the film forming method of forming the insulating film containing silicon on the substrate by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.
Shioya, Yoshimi. (2003). Film forming method and semiconductor device (U.S. Patent No. 6642157). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6642157
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile