The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Aug. 01, 2001
Evgeni Gousev, Mahopac, NY (US);
Atul C. Ajmera, Wappingers Falls, NY (US);
Christopher P. D'Emic, Ossining, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming an ultra thin gate dielectric for an integrated circuit device is disclosed. In an exemplary embodiment of the invention, the method includes forming an initial nitride layer upon a substrate by rapidly heating the substrate in the presence of an ammonia (NH ) gas, and then re-oxidizing the initial nitride layer by rapidly heating the initial nitride layer in the presence of a nitric oxide (NO) gas, thereby forming an oxynitride layer. The oxynitride layer has a nitrogen concentration therein of at about 1.0×10 atoms/cm to about 6.0×10 atoms/cm , and has a thickness which may be controlled within a sub 10 Å range.