The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Oct. 23, 2001
Chigusa Yamane, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of producing a semiconductor device able to prevent a change of shape of a contact hole and to form a contact having a low resistivity and low variability in resistivity, comprising the steps of: forming a conductive layer in a substrate; forming an insulating layer on the conductive layer; forming an opening used as the contact hole in the insulating layer to penetrate and reach the conductive layer; and removing native oxide formed on a surface of the conductive layer at a bottom of the opening by plasma etching and using an etching gas containing a fluorine compound gas at a predetermined concentration in a predetermined pressure wherein the concentration and pressure are determined within a range able to control an etching amount of the native oxide.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile