The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Jul. 25, 2002
Tohru Takiguchi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
On a laminate containing a p-InGaAsP layer, one of layers including a diffraction grating layer, an SiO insulating film pattern that has first rectangular openings, each opening having a long side orthogonal with the direction of the optical wave guide, periodically arranged at intervals in the direction of the optical wave guide is formed. An SiN insulating film pattern having a second opening with a strip shape having a width narrower than the long side of the first opening, extending in the direction of the optical wave guide, is formed on the SiO insulating film pattern. The laminate containing the p-InGaAsP layer is dry-etched using the SiO insulating film pattern and the SiN insulating film pattern as masks, and methane and a hydrogen plasma as the etching media.