The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
May. 29, 2001
Wong-Cheng Shih, Hsin-Chu, TW;
Lan Lin Chao, Taipei, TW;
Tai-Bor Wu, Hsin-Chu, TW;
Chich-Shang Chang, Pa-Te, TW;
Abstract
A method for forming a dielectric-constant-enhanced capacitor is provided. A wafer in a reaction chamber is provided, wherein said wafer comprises a first conductive layer. Then, a first dielectric layer is formed above said first conductive layer to prevent said first conductive layer from growing silicon oxide and to diminish leakage current. Next a precursor is transmitted to a vaporizer. Then said precursor is transformed to a gas and said gas is transmitted to said reaction chamber. Next, a second dielectric layer is deposited above said first dielectric layer. Then a heat treatment is proceeded and a second conductive layer is formed on said second dielectric layer.