The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2003
Filed:
Dec. 28, 2000
Takahiro Sato, Kanagawa, JP;
Hajime Sakata, Kanagawa, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A surface emitting semiconductor laser includes an active region formed on a growth substrate, upper and lower mirror layers that sandwich the active region to construct a vertical cavity, a selective oxidization layer, and a current injecting unit for injecting a current into the active region. The selective oxidization layer is selectively oxidized and insulated and is provided on the side of the active region opposite to the side of the substrate. In this structure, a post portion is formed by removing semiconductor material formed on the substrate down to an uppermost or halfway level of the selective oxidization layer while the selective oxidization layer is used as an etch stop layer, and the selective oxidization layer acts as both a current confinement layer for the current injection and an insulating layer for the current injecting unit.