The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2003

Filed:

Feb. 03, 2003
Applicant:
Inventors:

Satoshi Takahashi, Kawasaki, JP;

Minoru Yamashita, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract

In a nonvolatile semiconductor memory device, first and second dynamic reference cells are subjected to a same rewriting operation as performed to a memory cell. An average reference current is obtained from the first and second dynamic reference cells, and is compared with a current of data read from the memory cell so as to judge a level of the read data. In this configuration, the second dynamic reference cell is programmed according to a threshold value of the first dynamic reference cell.


Find Patent Forward Citations

Takahashi, Satoshi. (2003). Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell (U.S. Patent No. 6639849). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6639849

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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