The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2003
Filed:
Aug. 03, 2001
Dietmar Gogl, Fishkill, NY (US);
Helmut Kandolf, München, DE;
Stefan Lammers, München, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A configuration and method for low-loss writing of an MRAM includes setting voltages at bit lines and word lines such that the voltage across the memory cells between a selected word/bit line and the individual bit line/word lines is minimal. A voltage drop occurs on a selected word/bit line connected to a particular memory cell when writing into the memory cell and voltages at the bit/word lines are set to minimize a cell voltage across the memory cells between a selected word/bit line and individual bit/word lines. A voltage drop occurs on a selected word/bit line connected to a particular memory cell when writing into the particular cell, and, when a voltage V and a voltage V <V are present at a respective end of the selected word line/bit lines, the cell field is configured to have all of the bit/word lines set to voltages (V V )/2 and to have a maximum cell voltage of ±(V −V )/2.