The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2003
Filed:
Nov. 15, 2000
Applicant:
Inventors:
Jonathon Marlon Lobbins, Orlando, FL (US);
Lauri Monica Nelson, Orlando, FL (US);
Danica Deshone Smith, Orlando, FL (US);
Dominique A. Wesby, Orlando, FL (US);
Assignee:
Agere Systems, Inc., Allentown, PA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1114 ; H01L 2/362 ;
U.S. Cl.
CPC ...
H01L 3/1114 ; H01L 2/362 ;
Abstract
A method for making a semiconductor device is provided. The method allows for depositing a layer of a doped dielectric. The method further allows for executing plasma etching so that one or more etchant gases flow over the layer of doped dielectric. A redepositing step allows for redepositing another layer of doped dielectric over the plasma etched layer. The present invention enables to remove crystal defects that may be present in the doped dielectric surface and improve surface planarity.