The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2003
Filed:
Jan. 22, 2002
Jan Theodoor Jozef Bosiers, Eindhoven, NL;
Agnes Catharina Maria Kleimann, Eindhoven, NL;
Yvonne Astrid Boersma, Nijmegen, NL;
Dalsa Corporation, Ontario, CA;
Abstract
The invention relates to a CCD of the buried-channel type comprising a charge-transport channel in the form of a zone ( ) of the first conductivity type, for example the n-type, in a well ( ) of the opposite conductivity type, in the example the p-type. In order to obtain a drift field in the channel below one or more gates ( ) to improve the charge transfer, the well is provided with a doping profile, so that the average concentration decreases in the direction of charge transport. Such a profile can be formed by covering the area of the well during the well implantation with a mask, thereby causing fewer ions to be implanted below the gates ( ) than below other parts of the channel. By virtue of the invention, it is possible to produce a gate ( ) combining a comparatively large length, for example in the output stage in front of the output gate ( ) to obtain sufficient storage capacity, with a high transport rate.