The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2003
Filed:
Apr. 11, 2002
Masahito Gotoh, Fukuyama, JP;
Tohru Ueda, Fukuyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
An a-Si film is formed on the whole surface of a quartz substrate , and a protection film is formed in a region to be used as a display unit on the a-Si film . Subsequently, after a catalyst metal is selectively introduced into the whole surface of a region to be used as a peripheral drive circuit on the a-Si film , crystal growth is allowed by heating the a-Si film to form a CG silicon film and a p-Si film . Then, the catalyst metal in the CG silicon film and the p-Si film is removed by gettering. The concentration of the catalyst metal in the CG silicon film is in the range of 1×10 atoms/cm or higher and lower than 1×10 atoms/cm . The concentration of the catalyst metal in the p-Si film for a display unit is made lower than the concentration of the catalyst metal in the CG silicon film for a peripheral drive circuit. Thereby, a semiconductor device having a driver monolithic type liquid crystal display device with high intensity, high precision and uniform characteristics can be achieved.