The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2003
Filed:
Oct. 04, 1996
Darius L. Crenshaw, Plano, TX (US);
Promod Kumar, Waukegan, IL (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for forming a dynamic random access memory with increased capacitance includes preparing ( ) ultra-fine particles in a microemulsion. The particles are deposited ( ) on the lower electrode layer of the memory cell. A micro-villus pattern is then formed ( ) on the lower electrode layer, using the particles as a mask. A layer of HSG polysilicon may then be deposited ( ) on the micro-villus pattern. A dielectric and upper electrode are then formed ( ) overlying the lower electrode to form a storage capacitor for the dynamic random access memory.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile