The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2003
Filed:
Mar. 26, 2002
Kazutaka Manabe, Tokyo, JP;
Other;
Abstract
A semiconductor device including an IGFET (insulated gate field effect transistor) ( ) is disclosed. IGFET ( ) may include a source/drain area ( ) having an impurity concentration distribution that may be formed shallower at a higher concentration than the impurity concentration distribution in another source/drain area ( ). A gate oxide film may include a first gate oxide film ( ) adjacent to source/drain area ( ) and a second gate oxide film ( ) adjacent to source drain area ( ). Second gate oxide film ( ) may be thinner than first gate oxide film ( ). An impurity concentration distribution of a second channel impurity area ( ) under second gate oxide film ( ) may be at a higher concentration than an impurity concentration distribution of a first channel impurity area ( ) under first gate oxide film ( ). In this way, an electric field at a PN junction of source/drain area ( ) may be reduced.