The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2003
Filed:
Sep. 03, 2002
Applicant:
Inventors:
Takashi Noguchi, Atsugi, JP;
Rafael Reif, Newton, MA (US);
Julie Tsai, Belmont, MA (US);
Andrew J. Tang, Arlington, TX (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1339 ; H01L 2/100 ; H01L 2/120 ; H01L 2/136 ;
U.S. Cl.
CPC ...
H01L 2/1339 ; H01L 2/100 ; H01L 2/120 ; H01L 2/136 ;
Abstract
The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si Ge alloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-Si Ge alloy material and the gate, and a method for fabricating such a high-performance thin film transistor.
Noguchi, Takashi. (2003). High performance poly-sige thin film transistor and a method of fabricating such a thin film transistor (U.S. Patent No. 6638797). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6638797
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile