The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2003
Filed:
Dec. 12, 2002
Soon-Yong Kweon, Ichon-shi, KR;
Hynix Semiconductor Inc., Ichon-shi, KR;
Abstract
The present invention provides a method including the steps of: forming a first diffusion barrier on an insulating layer and in a contact hole; forming a conductive layer on the first diffusion barrier; forming a conductive plug in the contact hole by removing the conductive layer thereby obtaining a first recess in the contact hole, wherein the first recess is surrounded by the conductive layer in the contact hole; etching the first diffusion barrier on the insulating layer thereby forming a second recess in the contact hole, wherein a portion of the conductive plug is surrounded by the second recess and the second recess is surrounded by the insulating layer; removing the portion of the conductive plug surrounded by the second recess thereby forming a third recess in the contact hole, wherein the third recess is surrounded by the insulating layer and bottom of the of the third recess expose the first diffusion barrier and the conductive plug in the contact hole; and forming a second diffusion barrier in the third recess.