The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2003

Filed:

Dec. 07, 2001
Applicant:
Inventor:

Masashi Yonemaru, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 1/716 ;
U.S. Cl.
CPC ...
H03K 1/716 ;
Abstract

A semiconductor integrated circuit of the present invention includes MOSFETs of at least one of N channel- and P channel-types where at least two MOSFETs included in a plurality of MOSFETs, which are provided in a channel between a high potential power line and a low potential power line, includes two serially-connected MOSFETs of the same channel-type in which their respective gates are connected to each other.


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