The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2003
Filed:
Dec. 12, 2001
Jeong Soo Kim, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A method of fabricating the SRAM cell is disclosed. The method includes forming a gate on a substrate, forming an oxidation barrier film on side portions of the gate, oxidizing the resultant structure by using an oxidation process to form an oxide film on a top surface of the gate, implanting high density impurity ions to the substrate to form a lightly doped region and a highly doped region in the substrate at side portions of the gate, forming an insulating layer over the substrate to define a contact hole that exposes portions of the gate and the highly doped region, and forming an interconnect in the contact hole to connect the gate and the highly doped region.