The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2003
Filed:
Mar. 27, 2002
Applicant:
Inventors:
Kazumi Inoh, Yokohama, JP;
Shigeru Kawanaka, Yokohama, JP;
Yoshihiro Minami, Fujisawa, JP;
Yasuhiro Katsumata, Chigasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/906 ;
U.S. Cl.
CPC ...
H01L 2/906 ;
Abstract
A semiconductor device comprises: a semiconductor substrate; an insulating layer provided on said semiconductor substrate; a first semiconductor layer provided on said insulating layer; a plurality of openings penetrating said first semiconductor layer and said insulating layer and reaching said semiconductor substrate; and second semiconductor layers filling said openings by selective growth and connected to said semiconductor substrate, wherein areal sizes of said plurality of openings are substantially equal to each other.