The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2003
Filed:
Aug. 31, 2000
Applicant:
Inventors:
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ;
Abstract
A P-channel type DMOS transistor includes heavily doped source/drain layers formed in an N-type well , a gate electrode formed on a channel layer located between the source/drain layers , an N-type body layer formed in the vicinity of the source layer, and a lightly-doped drain layer formed between the channel layer and the drain layer . In such a P-channel type DMOS transistor, a P-type layer is formed in the channel layer at the upper part of the N-type body layer . In this configuration, the driving capability of the P-channel type DMOS transistor can be improved.