The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2003
Filed:
Jan. 26, 2001
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract
Memory cell gates are formed on the main surface of a semiconductor substrate via a gate isolation film. Source regions and drain regions are formed on both sides of the memory cell gates. The source regions have p impurity regions and n impurity regions while the drain regions have p impurity regions and n impurity regions. And the concentration of the p impurity regions is made higher than the concentration of the p regions while the concentration of the n impurity regions is made higher than the concentration of the n impurity regions.