The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2003
Filed:
Feb. 09, 2001
Gordon K. Madson, Herriman, UT (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A method of manufacturing a trench structure for a trench MOSFET, including the steps of providing a semiconductor substrate having a major surface, forming a dielectric pillar on the substrate major surface (the dielectric pillar extending substantially perpendicularly from the major surface of the substrate), selectively forming a semiconductor layer around the dielectric pillar, and removing a predetermined length of the dielectric pillar to create a trench in the substrate, the trench defined by sidewalls and a bottom. The method permits the controlled formation of a dielectric plug at the bottom of the trench, the plug having predetermined dimensions.