The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2003
Filed:
Jun. 29, 2001
Ali Rezvani, San Jose, CA (US);
Douglas Sudjian, Santa Clara, CA (US);
RF Micro Devices, Inc., Greensboro, NC (US);
Abstract
Techniques to isolate noise-sensitive circuits from noise generated by nearby circuits. In one design, a quiet region is formed on a die when surrounded by a deep n-well formed on top of a p-type substrate. The deep n-well is heavily doped n-type and forms a depletion region at the junction with the p-type substrate. The depth and width of the depletion region is dependent on the doping concentration of the deep n-well and the amount of reverse bias voltage applied to the deep n-well. In general, a wider and deeper depletion region may be formed by more heavily doping the deep n-well and applying a higher reverse bias voltage. By properly constructing the deep n-well and applying a high reverse bias voltage, a deep and wide depletion region may be formed to provide a barrier against noise from entering the quiet region.