The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2003
Filed:
Aug. 27, 2001
Applicant:
Inventors:
Jörn Lützen, Dresden, DE;
Bernhard Sell, Dresden, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1119 ;
Abstract
In a SOI substrate, a semiconductor circuit formed in a SOI substrate, and an associated production method, a multilayer barrier layer with a potential barrier and a diffusion barrier is used to reliably prevent diffusion of impurities between element layers. This allows semiconductor circuits to be produced with smaller structure sizes and with a higher integration density.
Lützen, Jörn. (2003). Soi substrate, a semiconductor circuit formed in a soi substrate, and an associated production method (U.S. Patent No. 6633061). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6633061
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile