The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2003
Filed:
Feb. 22, 2001
Shoji Hirata, Kanagawa, JP;
Hironobu Narui, Kanagawa, JP;
Sony Corporation, , JP;
Abstract
A method of fabricating a semiconductor light-emitting device in which the window structure can readily be obtained without relying upon an advanced process technology. In the method of the present invention, a first multi-layered film formed on a substrate is patterned into a groove pattern having a widened portion and narrowed portions provided on both sides of such widened portion. A second multi-layered film is then epitaxially grown on the substrate so as to cover the groove pattern, by successively growing an n-type second lower clad layer, a second active layer, a p-type second upper clad layer and a p-type cap layer. The cap layer is then patterned to thereby form a current injection layer on the second multi-layered film within the groove pattern so as to be extended along the longitudinal direction of such groove pattern.