The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2003
Filed:
Feb. 04, 2002
Jacques J. Bertrand, Capitola, CA (US);
George J. Kluth, Los Gatos, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Sub-micron dimensioned, ultra-shallow junction MOS and/or CMOS transistor devices are fomxed by a salicide process wherein a blanket nickel layer is formed in contact with the exposed portions of the substrate surface adjacent the sidewall spacers, the top surface of the gate electrode, and the sidewall spacers. Embodiments include forming the blanket layer of nickel is formed by the sequential steps of: (i) forming a layer of nickel by sputtering with nitrogen gas; and, (ii) forming a layer of nickel by sputtering with argon gas. The two step process for forming the blanket layer of nickel advantageously prevents the formation of nickel silicide on the outer surfaces of the insulative sidewall spacers.