The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2003
Filed:
May. 29, 2001
Werner Goetz, Palo Alto, CA (US);
Nathan Fredrick Gardner, Mountain View, CA (US);
Richard Scott Kern, San Jose, CA (US);
Andrew Youngkyu Kim, Sam Jose, CA (US);
Anneli Munkholm, Portolla Valley, CA (US);
Stephen A. Stockman, Morgan Hill, CA (US);
Christopher P. Kocot, Palo Alto, CA (US);
Richard P. Schneider, Jr., Mountain View, CA (US);
Lumileds Lighting U.S., LLC, San Jose, CA (US);
Abstract
III-Nitride light emitting diodes having improved performance are provided. In one embodiment, a light emitting device includes a substrate, a nucleation layer disposed on the substrate, a defect reduction structure disposed above the nucleation layer, and an n-type III-Nitride semiconductor layer disposed above the defect reduction structure. The n-type layer has, for example, a thickness greater than about one micron and a silicon dopant concentration greater than or equal to about 10 cm . In another embodiment, a light emitting device includes a III-Nitride semiconductor active region that includes at least one barrier layer either uniformly doped with an impurity or doped with an impurity having a concentration graded in a direction substantially perpendicular to the active region.