The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2003
Filed:
Dec. 20, 2000
Applicant:
Inventors:
Fan Zhang, San Jose, CA (US);
Daniel L. Towery, Santa Clara, CA (US);
Joseph A. Levert, Santa Clara, CA (US);
Shyama P. Mukherjee, Morgan Hill, CA (US);
Assignee:
Honeywell International Inc., Morristown, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C11D 7/08 ; H01L 2/1302 ;
U.S. Cl.
CPC ...
C11D 7/08 ; H01L 2/1302 ;
Abstract
Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.