The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2003
Filed:
Jul. 03, 2001
Applicant:
Inventors:
Yoshimi Shioya, Tokyo, JP;
Kouichi Ohira, Tokyo, JP;
Kazuo Maeda, Tokyo, JP;
Tomomi Suzuki, Tokyo, JP;
Hiroshi Ikakura, Tokyo, JP;
Youichi Yamamoto, Tokyo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate from a surface of which a copper wiring is exposed, the interlayer insulating film consists of multi-layered insulating films and the insulating film , that contacts to the copper wiring , out of the multi-layered insulating films is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N ) and ammonia (NH ) to react.